the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. mos field effect transistor np15p04slg switching p-channel power mosfet data sheet document no. d19077ej2v0ds00 (2nd edition) date published march 2008 ns printed in japan 2007 the mark shows major revised points. the revised points can be easily searched by copying an "" in the pdf file and specifying it in the "find what:" field. description the np15p04slg is p-channel mos field effect transi stor designed for high current switching applications. ordering information part number lead plating packing package np15p04slg-e1-ay note NP15P04SLG-E2-AY note pure sn (tin) tape 2500 p/reel to-252 (mp-3zk) note pb-free (this product does not contai n pb in external electrode.) features ? super low on-state resistance r ds(on)1 = 40 m max. (v gs = ? 10 v, i d = ? 7.5 a) r ds(on)2 = 60 m max. (v gs = ? 4.5 v, i d = ? 7.5 a) ? low input capacitance c iss = 1100 pf typ. ? built-in gate protection diode absolute maximum ratings (t a = 25 c) drain to source voltage (v gs = 0 v) v dss ? 40 v gate to source voltage (v ds = 0 v) v gss m 20 v drain current (dc) (t c = 25 c) i d(dc) m 15 a drain current (pulse) note1 i d(pulse) m 45 a total power dissipation (t c = 25 c) p t1 30 w total power dissipation (t a = 25 c) p t2 1.2 w channel temperature t ch 175 c storage temperature t stg ? 55 to + 175 c single avalanche current note2 i as 16 a single avalanche energy note2 e as 25 mj notes 1. pw 10 s, duty cycle 1% 2. starting t ch = 25 c, v dd = ? 20 v, r g = 25 , v gs = ? 20 0 v thermal resistance channel to case thermal resistance r th(ch-c) 5.0 c/w channel to ambient thermal resistance r th(ch-a) 125 c/w (to-252)
data sheet d19077ej2v0ds 2 np15p04slg electrical characteristics (t a = 25 c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = ? 40 v, v gs = 0 v ? 10 a gate leakage current i gss v gs = m 20 v, v ds = 0 v m 10 a gate to source threshold voltage v gs(th) v ds = v gs , i d = ? 250 a ? 1.0 ? 1.6 ? 2.5 v forward transfer admittance note | y fs | v ds = ? 10 v, i d = ? 7.5 a 6 12 s drain to source on-state resistance note r ds(on)1 v gs = ? 10 v, i d = ? 7.5 a 31 40 m r ds(on)2 v gs = ? 4.5 v, i d = ? 7.5 a 38 60 m input capacitance c iss v ds = ? 10 v, 1100 pf output capacitance c oss v gs = 0 v, 190 pf reverse transfer capacitance c rss f = 1 mhz 140 pf turn-on delay time t d(on) v dd = ? 20 v, i d = ? 7.5 a, 7 ns rise time t r v gs = ? 10 v, 5 ns turn-off delay time t d(off) r g = 0 100 ns fall time t f 65 ns total gate charge q g v dd = ? 32 v, 23 nc gate to source charge q gs v gs = ? 10 v, 3 nc gate to drain charge q gd i d = ? 15 a 7 nc body diode forward voltage note v f(s-d) i f = ? 15 a, v gs = 0 v 0.94 1.5 v reverse recovery time t rr i f = ? 15 a, v gs = 0 v, 32 ns reverse recovery charge q rr di/dt = ? 100 a/ s 33 nc note pulsed test pw 350 s, duty cycle 2% test circuit 1 avalanche capability r g = 25 50 l v dd v gs = ? 20 0 v bv dss i as i d v ds starting t ch v dd d.u.t. test circuit 3 gate charge test circuit 2 switching time pg. r g 0 v gs ( ? ) d.u.t. r l v dd = 1 s duty cycle 1% v gs wave form v ds wave form v gs ( ? ) 10% 90% v gs 10% 0 v ds ( ? ) 90% 90% t d(on) t r t d(off) t f 10% v ds 0 t on t off pg. pg. 50 d.u.t. r l v dd i g = ? 2 ma ?
data sheet d19077ej2v0ds 3 np15p04slg typical characteristics (t a = 25 c) derating factor of forward bias safe operating area total power dissipation vs. case temperature dt - percentage of rated power - % 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 200 t c - case temperature - c p t - total power dissipation - w 0 10 20 30 40 50 0 25 50 75 100 125 150 175 200 t c - case temperature - c forward bias safe operating area i d - drain current - a -0.01 -0.1 -1 -10 -100 -1000 -0.1 -1 -10 -100 dc i d(dc) i d(pulse) t c = 25 c single pulse r d s ( o n ) l i m i t e d ( v g s = ? 1 i 0 v ) 1 i 0 m i s 1 i m i s p o w e r d i s s i p a t i o n l i m i t e d p w = 1 i 0 0 s v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.01 0.1 1 10 100 1000 r th(ch-a) = 125 c/w i r th(ch-c) = 5.0c/w i single pulse pw - pulse width - s 100 1 m 10 m 100 m 1 10 100 1000
data sheet d19077ej2v0ds 4 np15p04slg drain current vs. drain to source voltage forward transfer characteristics i d - drain current - a 0 -10 -20 -30 -40 -50 0-1-2-3 v gs = ? 10 v pulsed ? 4.5 v v ds - drain to source voltage - v i d - drain current - a -0.001 -0.01 -0.1 -1 -10 -100 -0 -1 -2 -3 -4 -5 v ds = ? 10 v pulsed t ch = ? 55 c ? 25 c 25 c 75 c 125 c 150 c 175 c v gs - gate to source voltage - v gate to source threshold voltage vs. channel temperature forward transfer admittance vs. drain current v gs(th) - gate to source threshold voltage - v 0 -0.5 -1 -1.5 -2 -2.5 -3 -75 -25 25 75 125 175 225 v ds = v gs i d = ? 250 a t ch - channel temperature - c | y fs | - forward transfer admittance - s 0.1 1 10 100 -0.1 -1 -10 -100 v ds = ? 10 v pulsed t ch = ? 55 c ? 25 c 25 c 75 c 125 c 150 c 175 c i d - drain current - a drain to source on-state resistance vs. drain current drain to source on-state resistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - m 0 10 20 30 40 50 60 70 80 -0.1 -1 -10 -100 ? 10 v pulsed v gs = ? 4.5 v i d - drain current - a r ds(on) - drain to source on-state resistance - m 0 10 20 30 40 50 60 70 80 0 -5 -10 -15 -20 pulsed i d = ? 15 a ? 7.5 a ? 3 a v gs - gate to source voltage - v
data sheet d19077ej2v0ds 5 np15p04slg drain to source on-state resistance vs. channel temperature capacitance vs. drain to source voltage r ds(on) - drain to source on-state resistance - m 0 10 20 30 40 50 60 70 80 -75 -25 25 75 125 175 225 i d = ? 7.5 a pulsed ? 10 v v gs = ? 4.5 v t ch - channel temperature - c c iss , c oss , c rss - capacitance - pf 10 100 1000 10000 -0.1 -1 -10 -100 v gs = 0 v f = 1 mhz c iss c oss c rss v ds - drain to source voltage - v switching characteristics dynamic input/output characteristics t d(on) , t r , t d(off) , t f - switching time - ns 1 10 100 1000 -0.1 -1 -10 -100 t r t d(off) t d(on) t f v dd = ? 20 v v gs = ? 10 v r g = 0 i d - drain current - a v ds - drain to source voltage - v 0 -10 -20 -30 -40 0102030 0 -3 -6 -9 -12 v ds i d = ? 15 a v gs v dd = ? 32 v ? 20 v ? 8 v q g - gate charge - nc v gs - gate to source voltage - v source to drain diode forward voltage reverse recovery time vs. diode forward current i f - diode forward current - a -0.01 -0.1 -1 -10 -100 00.511.5 v gs = ? 10 v 0 v pulsed v f(s-d) - source to drain voltage - v t rr - reverse recovery time - ns 1 10 100 1000 -0.1 -1 -10 -100 di/dt = ? 100 a/ s v gs = 0 v i f - diode forward current - a
data sheet d19077ej2v0ds 6 np15p04slg package drawing (unit: mm) to-252 (mp-3zk) 6.5 0.2 2.3 0.1 0.5 0.1 0.76 0.12 0 to 0.25 0.5 0.1 1.0 no plating no plating 5.1 typ. 1.0 typ. 6.1 0.2 0.51 min. 4.0 min . 0.8 10.4 max. (9.8 typ.) 4.3 min. 1 4 23 1.14 max. 2.3 2.3 1. gate 2. drain 3. source 4. fin (drain) equivalent circuit source body diode gate protection diode gate drain remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protecti on circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
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